sct2h12nz-尊龙凯时ag客户端
sic（碳化硅）mosfet
sct2h12nz
主要规格
特性：
drain-source voltage[v]
1700
drain-source on-state resistance(typ.)[mω]
1150
generation
2nd gen (planar)
drain current[a]
3.7
total power dissipation[w]
35
junction temperature(max.)[°c]
175
storage temperature (min.)[°c]
-55
storage temperature (max.)[°c]
175
package size [mm]
16x21 (t=5.2)
特点：
- low on-resistance
- fast switching speed
- long creepage distance
- simple to drive
- pb-free lead plating; rohs compliant
reference design / application evaluation kit
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- evaluation board - bd7682fj-lb-evk-402
isolation fly-back converter quasi-resonant method output 24 w 24 v
| user guide | block diagram | schematic | part list | layout (pdf) |
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- evaluation board - bd7682fj-lb-evk-302
the bd7682fj is an ac/dc quasi-resonant flyback controller ic from rohm semiconductor and offers an auxiliary power supply solution if combined with the 1700 v sic mosfet (sct2h12nz). the bd7682fj and sct2h12nz combined together have been used to develop an isolated 100 w 24 v output auxiliary power solution with a very accurate voltage regulation.
| user guide |
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